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2SA0885 Folha de dados(PDF) 1 Page - Panasonic Semiconductor

Nome de Peças 2SA0885
Descrição Electrónicos  For low-frequency power amplification
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Fabricante Electrônico  PANASONIC [Panasonic Semiconductor]
Página de início  http://www.panasonic.com/industrial/
Logo PANASONIC - Panasonic Semiconductor

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Power Transistors
1
Publication date: February 2003
SJD00002BED
2SA0885 (2SA885)
Silicon PNP epitaxial planar type
For low-frequency power amplification
Complementary to 2SC1846
■ Features
• Output of 3 W can be obtained by a complementary pair with
2SC1846
• TO-126B package which requires no insulation plate for installa-
tion to the heat sink
■ Absolute Maximum Ratings T
a
= 25°C
■ Electrical Characteristics T
a = 25°C ± 3°C
Unit: mm
1: Emitter
2: Collector
3: Base
TO-126B-A1 Package
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
VCBO
IC = −10 µA, IE = 0
−45
V
Collector-emitter voltage (Base open)
VCEO
IC =
−2 mA, I
B = 0
−35
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = −20 V, IE = 0
− 0.1
µA
Collector-emitter cutoff current (Base open)
ICEO
VCE = −20 V, IB = 0
−100
µA
Emitter-base cutoff current (Collector open)
IEBO
VEB
= −5 V, I
C
= 0
−10
µA
Forward current transfer ratio
hFE1 *
VCE = −10 V, IC = −500 mA
85
340
hFE2
VCE = −5 V, IC = −1 A
50
Collector-emitter saturation voltage
VCE(sat)
IC
= −500 mA, I
B
= −50 mA
− 0.5
V
Transition frequency
fT
VCE = −10 V, IE = 50 mA, f = 200 MHz
200
MHz
Collector output capacitance
Cob
VCB = −10 V, IE = 0, f = 1 MHz
20
30
pF
(Common base, input open circuited)
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
−45
V
Collector-emitter voltage (Base open)
VCEO
−35
V
Emitter-base voltage (Collector open)
VEBO
−5V
Collector current
IC
−1A
Peak collector current
ICP
−1.5
A
Collector power dissipation
PC
1.2
W
5.0 *
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
Note) *: With a 100
× 100 × 2 mm Al heat sink
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Note) The part number in the parenthesis shows conventional part number.
Rank
Q
R
S
hFE1
85 to 170
120 to 240
170 to 340
8.0
+0.5
–0.1
3.2±0.2
0.75±0.1
0.5±0.1
2.3±0.2
4.6±0.2
0.5±0.1
1.76±0.1
123
φ 3.16±0.1


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