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FDS3572 Folha de dados(PDF) 1 Page - Fairchild Semiconductor

Nome de Peças FDS3572
Descrição Electrónicos  N-Channel PowerTrench MOSFET
Download  11 Pages
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Fabricante Electrônico  FAIRCHILD [Fairchild Semiconductor]
Página de início  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDS3572 Folha de dados(HTML) 1 Page - Fairchild Semiconductor

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©2003 Fairchild Semiconductor Corporation
November 2003
FDS3572 Rev. A
FDS3572
N-Channel PowerTrench® MOSFET
80V, 8.9A, 16m
Features
•rDS(ON) = 14mΩ (Typ.), VGS = 10V, ID = 8.9A
•Qg(tot) = 31nC (Typ.), VGS = 10V
• Low Miller Charge
•Low QRR Body Diode
• Optimized efficiency at high frequencies
• UIS Capability (Single Pulse and Repetitive Pulse)
Formerly developmental type 82663
Applications
• Primary switch for Isolated DC/DC converters
• Distributed Power and Intermediate Bus Architectures
• High
Voltage
Synchronous
Rectifier for
DC
Bus
Converters
MOSFET Maximum Ratings T
A = 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
Parameter
Ratings
Units
VDSS
Drain to Source Voltage
80
V
VGS
Gate to Source Voltage
±20
V
ID
Drain Current
8.9
A
Continuous (TA = 25
oC, V
GS = 10V, R
θJA = 50
oC/W)
Continuous (TA = 100
oC, V
GS = 10V, R
θJA = 50
oC/W)
5.6
A
Pulsed
Figure 4
A
EAS
Single Pulse Avalanche Energy (Note 1)
515
mJ
PD
Power dissipation
2.5
W
Derate above 25oC20
mW/oC
TJ, TSTG
Operating and Storage Temperature
-55 to 150
oC
RθJC
Thermal Resistance, Junction to Case (Note 2)
25
oC/W
RθJA
Thermal Resistance, Junction to Ambient at 10 seconds (Note 3)
50
oC/W
RθJA
Thermal Resistance, Junction to Ambient at 1000 seconds (Note 3)
85
oC/W
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDS3572
FDS3572
SO-8
330mm
12mm
2500 units
SO-8
Branding Dash
1
5
2
3
4
4
3
2
1
5
6
7
8


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