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FQPF10N20C Folha de dados(PDF) 1 Page - Fairchild Semiconductor

Nome de Peças FQPF10N20C
Descrição Electrónicos  200V N-Channel MOSFET
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Fabricante Electrônico  FAIRCHILD [Fairchild Semiconductor]
Página de início  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FQPF10N20C Folha de dados(HTML) 1 Page - Fairchild Semiconductor

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©2003 Fairchild Semiconductor Corporation
Rev. A, March 2003
QFETTM
FQP10N20C/FQPF10N20C
200V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters,
switch mode power supplies, DC-AC converters for
uninterrupted power supplies and motor controls.
Features
• 9.5A, 200V, RDS(on) = 0.36Ω @VGS = 10 V
• Low gate charge ( typical 20 nC)
• Low Crss ( typical 40.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Absolute Maximum Ratings T
C = 25°C unless otherwise noted
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
Parameter
FQP10N20C
FQPF10N20C
Units
VDSS
Drain-Source Voltage
200
V
ID
Drain Current
- Continuous (TC = 25°C)
9.5
9.5 *
A
- Continuous (TC = 100°C)
6.0
6.0 *
A
IDM
Drain Current
- Pulsed
(Note 1)
38
38 *
A
VGSS
Gate-Source Voltage
± 30
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
210
mJ
IAR
Avalanche Current
(Note 1)
9.5
A
EAR
Repetitive Avalanche Energy
(Note 1)
7.2
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
5.5
V/ns
PD
Power Dissipation (TC = 25°C)
72
38
W
- Derate above 25°C
0.57
0.3
W/°C
TJ, TSTG
Operating and Storage Temperature Range
-55 to +150
°C
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
°C
Symbol
Parameter
FQP10N20C
FQPF10N20C
Units
RθJC
Thermal Resistance, Junction-to-Case
1.74
3.33
°C/W
RθJS
Thermal Resistance, Case-to-Sink Typ.
0.5
--
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
62.5
62.5
°C/W
TO-220
FQP Series
G
S
D
TO-220F
FQPF Series
G
S
D
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