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CSD17318Q2T Folha de dados(PDF) 3 Page - Texas Instruments |
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CSD17318Q2T Folha de dados(HTML) 3 Page - Texas Instruments |
3 / 13 page 3 CSD17318Q2 www.ti.com SLPS667 – FEBRUARY 2017 Product Folder Links: CSD17318Q2 Submit Documentation Feedback Copyright © 2017, Texas Instruments Incorporated 5 Specifications 5.1 Electrical Characteristics TA = 25°C (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT STATIC CHARACTERISTICS BVDSS Drain-to-source voltage VGS = 0 V, ID = 250 μA 30 V IDSS Drain-to-source leakage VGS = 0 V, VDS = 24 V 1 μA IGSS Gate-to-source leakage VDS = 0 V, VGS = 10 V 100 nA VGS(th) Gate-to-source threshold voltage VDS = VGS, ID = 250 μA 0.6 0.9 1.2 V RDS(on) Drain-to-source on resistance VGS = 2.5 V, ID = 8 A 20 30 m Ω VGS = 4.5 V, ID = 8 A 13.9 16.9 VGS = 8 V, ID = 8 A 12.6 15.1 gfs Transconductance VDS = 3 V, ID = 8 A 42 S DYNAMIC CHARACTERISTICS Ciss Input capacitance VGS = 0 V, VDS = 15 V, ƒ = 1 MHz 676 879 pF Coss Output capacitance 71 92 pF Crss Reverse transfer capacitance 39 51 pF RG Series gate resistance 1.0 2.0 Ω Qg Gate charge total (4.5 V) VDS = 15 V, ID = 8 A 6.0 nC Qgd Gate charge gate-to-drain 1.3 nC Qgs Gate charge gate-to-source 1.5 nC Qg(th) Gate charge at Vth 0.7 nC Qoss Output charge VDS = 15 V, VGS = 0 V 2.7 nC td(on) Turnon delay time VDS = 15 V, VGS = 4.5 V, ID = 8 A, RG = 2 Ω 5 ns tr Rise time 16 ns td(off) Turnoff delay time 13 ns tf Fall time 4 ns DIODE CHARACTERISTICS VSD Diode forward voltage ISD = 8 A, VGS = 0 V 0.8 1.0 V Qrr Reverse recovery charge VDD= 15 V, IF = 8 A, di/dt = 300 A/μs 2.9 nC trr Reverse recovery time 12 ns (1) RθJC is determined with the device mounted on a 1-in 2 (6.45-cm2), 2-oz (0.071-mm) thick Cu pad on a 1.5-in × 1.5-inch (3.81-cm × 3.81- cm), 0.06-in (1.52-mm) thick FR4 PCB. RθJC is specified by design, whereas RθJA is determined by the user’s board design. (2) Device mounted on FR4 material with 1-in2 (6.45-cm2), 2-oz (0.071-mm) thick Cu. 5.2 Thermal Characteristics TA = 25°C (unless otherwise noted) PARAMETER MIN TYP MAX UNIT RθJC Thermal resistance junction-to-case(1) 7.9 °C/W RθJA Thermal resistance junction-to-ambient(1)(2) 65 °C/W |
Nº de peça semelhante - CSD17318Q2T |
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Descrição semelhante - CSD17318Q2T |
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