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CSD17318Q2T Folha de dados(PDF) 3 Page - Texas Instruments

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Nome de Peças CSD17318Q2T
Descrição Electrónicos  30-V N-Channel NexFET Power MOSFET
Download  13 Pages
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Fabricante Electrônico  TI1 [Texas Instruments]
Página de início  http://www.ti.com
Logo TI1 - Texas Instruments

CSD17318Q2T Folha de dados(HTML) 3 Page - Texas Instruments

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CSD17318Q2
www.ti.com
SLPS667 – FEBRUARY 2017
Product Folder Links: CSD17318Q2
Submit Documentation Feedback
Copyright © 2017, Texas Instruments Incorporated
5 Specifications
5.1 Electrical Characteristics
TA = 25°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
STATIC CHARACTERISTICS
BVDSS
Drain-to-source voltage
VGS = 0 V, ID = 250 μA
30
V
IDSS
Drain-to-source leakage
VGS = 0 V, VDS = 24 V
1
μA
IGSS
Gate-to-source leakage
VDS = 0 V, VGS = 10 V
100
nA
VGS(th)
Gate-to-source threshold voltage
VDS = VGS, ID = 250 μA
0.6
0.9
1.2
V
RDS(on)
Drain-to-source on resistance
VGS = 2.5 V, ID = 8 A
20
30
m
VGS = 4.5 V, ID = 8 A
13.9
16.9
VGS = 8 V, ID = 8 A
12.6
15.1
gfs
Transconductance
VDS = 3 V, ID = 8 A
42
S
DYNAMIC CHARACTERISTICS
Ciss
Input capacitance
VGS = 0 V, VDS = 15 V,
ƒ = 1 MHz
676
879
pF
Coss
Output capacitance
71
92
pF
Crss
Reverse transfer capacitance
39
51
pF
RG
Series gate resistance
1.0
2.0
Ω
Qg
Gate charge total (4.5 V)
VDS = 15 V,
ID = 8 A
6.0
nC
Qgd
Gate charge gate-to-drain
1.3
nC
Qgs
Gate charge gate-to-source
1.5
nC
Qg(th)
Gate charge at Vth
0.7
nC
Qoss
Output charge
VDS = 15 V, VGS = 0 V
2.7
nC
td(on)
Turnon delay time
VDS = 15 V, VGS = 4.5 V,
ID = 8 A, RG = 2 Ω
5
ns
tr
Rise time
16
ns
td(off)
Turnoff delay time
13
ns
tf
Fall time
4
ns
DIODE CHARACTERISTICS
VSD
Diode forward voltage
ISD = 8 A, VGS = 0 V
0.8
1.0
V
Qrr
Reverse recovery charge
VDD= 15 V, IF = 8 A,
di/dt = 300 A/μs
2.9
nC
trr
Reverse recovery time
12
ns
(1)
RθJC is determined with the device mounted on a 1-in
2 (6.45-cm2), 2-oz (0.071-mm) thick Cu pad on a 1.5-in × 1.5-inch (3.81-cm × 3.81-
cm), 0.06-in (1.52-mm) thick FR4 PCB. RθJC is specified by design, whereas RθJA is determined by the user’s board design.
(2)
Device mounted on FR4 material with 1-in2 (6.45-cm2), 2-oz (0.071-mm) thick Cu.
5.2 Thermal Characteristics
TA = 25°C (unless otherwise noted)
PARAMETER
MIN
TYP
MAX
UNIT
RθJC
Thermal resistance junction-to-case(1)
7.9
°C/W
RθJA
Thermal resistance junction-to-ambient(1)(2)
65
°C/W


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