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BF585 Folha de dados(PDF) 2 Page - NXP Semiconductors

Nome de Peças BF585
Descrição Electrónicos  NPN high-voltage transistors
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Fabricante Electrônico  PHILIPS [NXP Semiconductors]
Página de início  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BF585 Folha de dados(HTML) 2 Page - NXP Semiconductors

  BF585 Datasheet HTML 1Page - NXP Semiconductors BF585 Datasheet HTML 2Page - NXP Semiconductors BF585 Datasheet HTML 3Page - NXP Semiconductors BF585 Datasheet HTML 4Page - NXP Semiconductors BF585 Datasheet HTML 5Page - NXP Semiconductors BF585 Datasheet HTML 6Page - NXP Semiconductors BF585 Datasheet HTML 7Page - NXP Semiconductors BF585 Datasheet HTML 8Page - NXP Semiconductors  
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1996 Dec 09
2
Philips Semiconductors
Product specification
NPN high-voltage transistors
BF583; BF585; BF587
FEATURES
• Low feedback capacitance.
APPLICATIONS
• For use in video output stages of black and white and
colour television receivers.
DESCRIPTION
NPN transistors in a TO-202 plastic package.
PINNING
PIN
DESCRIPTION
1
emitter
2
collector
3
base
Fig.1
Simplified outline (TO-202) and symbol.
handbook, halfpage
12
3
MBH793
2
3
1
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
BF583
−
300
V
BF585
−
350
V
BF587
−
400
V
VCEO
collector-emitter voltage
open base
BF583
−
250
V
BF585
−
300
V
BF587
−
350
V
ICM
peak collector current
−
100
mA
Ptot
total power dissipation
in free air; Tamb ≤ 25 °C
−
1.6
W
hFE
DC current gain
IC = 25 mA; VCE =20V
−
50
Cre
feedback capacitance
IC =ic = 0; VCE = 30 V; f = 1 MHz
−
1.8
pF
fT
transition frequency
IC = 10 mA; VCE = 10 V
70
110
MHz


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