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LFUSCD20065B Folha de dados(PDF) 1 Page - Littelfuse |
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LFUSCD20065B Folha de dados(HTML) 1 Page - Littelfuse |
1 / 4 page © 2016 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 10/05/16 SiC Schottky Diode LFUSCD20065B, 650 V, 20 A,TO-247 3-lead RoHS Pb LFUSCD20065B Features Applications • Positive temperature coefficient for safe operation and ease of paralleling • 175 °C maximum operating junction temperature • Enhanced surge capability • Extremely fast, temperature-independent switching behavior • Dramatically reduced switching losses compared to Si bipolar diodes • Boost diodes in power factor correction • Switch-mode power supplies • Uninterruptible power supplies • Solar inverters • Industrial motor drives Maximum Ratings Characteristics Symbol Conditions Max. Unit DC Blocking Voltage V R - 650 V Repetitive Peak Reverse Voltage, Tj = 25 °C V RRM 650 V Surge Peak Reverse Voltage V RSM 650 V Maximum DC Forward Current I F T C = 125 °C 20 A Non-Repetitive Forward Surge Current I FSM T C = 25 °C, 8.3 ms, half sine pulse 90 A Non-Repetitive Peak Forward Current I F,MAX T C = 25 °C, 10 µS 910 A Non-Repetitive Avalanche Energy E AS T j = 25 °C, L = 5 mH, Ipk = 7.8 A, 168 mJ Power Dissipation P Tot T C = 25 °C 136 W T C = 125 °C 45 Maximum Operating Junction Temperature T J,MAX 175 °C Storage Temperature T STG -55 to 175 °C Circuit Diagram Description The LFUSCD series of silicon carbide (SiC) Schottky di- odes has near-zero recovery current, high surge capability, and a maximum operating junction temperature of 175 °C. The diode series is ideal for applications where improve- ments in efficiency, reliability, and thermal management are desired. Case 13 2 4 2 1 4 3 |
Nº de peça semelhante - LFUSCD20065B |
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Descrição semelhante - LFUSCD20065B |
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