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BD335 Folha de dados(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BD335 Folha de dados(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon NPN Power Transistor BD335 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA; IB= 0 100 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 12mA 2.0 V VBE(on) Base-Emitter On Voltage IC= 3A; VCE= 3V 2.5 V ICBO Collector Cutoff Current VCB= 100V; IE= 0 VCB= 100V; IE= 0,TC=150℃ 0.1 1.0 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 5 mA hFE-1* DC Current Gain IC= 0.5A; VCE= 3V 1900 hFE-2* DC Current Gain IC= 3A; VCE=3V 750 hFE-3* DC Current Gain IC= 6A; VCE= 3V 3000 *:Measured under pulse conditions:tp<300us,σ<2% |
Nº de peça semelhante - BD335 |
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Descrição semelhante - BD335 |
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