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SN74AUP1G80DCKT Folha de dados(PDF) 4 Page - Texas Instruments

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Nome de Peças SN74AUP1G80DCKT
Descrição Electrónicos  Low-Power Single Positive-Edge-Triggered D-Type Flip-Flop
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Fabricante Electrônico  TI1 [Texas Instruments]
Página de início  http://www.ti.com
Logo TI1 - Texas Instruments

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SN74AUP1G80
SCES593F – JULY 2004 – REVISED JULY 2017
www.ti.com
Product Folder Links: SN74AUP1G80
Submit Documentation Feedback
Copyright © 2004–2017, Texas Instruments Incorporated
(1)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2)
The input negative-voltage and output voltage ratings may be exceeded if the input and output current ratings are observed.
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
(1)
MIN
MAX
UNIT
VCC
Supply voltage
–0.5
4.6
V
VI
Input voltage(2)
–0.5
4.6
V
VO
Voltage range applied to any output in the high-impedance or power-off state (2)
–0.5
4.6
V
VO
Voltage range applied to any output in the high or low state (2)
–0.5
VCC + 0.5
V
IIK
Input clamp current
VI < 0
–50
mA
IOK
Output clamp current
VO < 0
–50
mA
IO
Continuous output current
±20
mA
Continuous current through VCC or GND
±50
mA
TJ
Junction temperature
150
°C
Tstg
Storage temperature
–65
150
°C
(1)
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2)
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.2 ESD Ratings
VALUE
UNIT
V(ESD)
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)
2000
V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2)
1000
(1)
All unused inputs of the device must be held at VCC or GND to assure proper device operation. See Implications of Slow or Floating
CMOS Inputs, SCBA004.
(2)
Defined by the signal integrity requirements and design-goal priorities.
6.3 Recommended Operating Conditions
See
(1)
MIN
MAX
UNIT
VCC
Supply voltage
0.8
3.6
V
VIH
High-level input voltage
VCC = 0.8 V
VCC
V
VCC = 1.1 V to 1.95 V
0.65 × VCC
VCC = 2.3 V to 2.7 V
1.6
VCC = 3 V to 3.6 V
2
VIL
Low-level input voltage
VCC = 0.8 V
0
V
VCC = 1.1 V to 1.95 V
0.35 × VCC
VCC = 2.3 V to 2.7 V
0.7
VCC = 3 V to 3.6 V
0.9
VI
Input voltage
0
3.6
V
VO
Output voltage
0
VCC
V
IOH
High-level output current(2)
VCC = 0.8 V
–20
µA
VCC = 1.1 V
–1.1
mA
VCC = 1.4 V
–1.7
VCC = 1.65
–1.9
VCC = 2.3 V
–3.1
VCC = 3 V
–4


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