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Os motores de busca de Datasheet de Componentes eletrônicos |
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Os motores de busca de Datasheet de Componentes eletrônicos |
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FM75N08 Folha de dados(PDF) 2 Page - First Components International |
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FM75N08 Folha de dados(HTML) 2 Page - First Components International |
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2 / 7 page  Electrical Characteristics ( TC = 25 °C unless otherwise noted ) Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA 80 - - V Δ BVDSS/ Δ TJ Breakdown Voltage Temperature coefficient ID = 250uA, referenced to 25 °C -0.08 - V/°C IDSS Drain-Source Leakage Current VDS = 80V, VGS = 0V -- 10 uA VDS = 64V, TC = 125 °C -- 100 uA IGSS Gate-Source Leakage, Forward VGS = 20V, VDS = 0V -- 100 nA Gate-source Leakage, Reverse VGS = -20V, VDS = 0V - - -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250uA 2.0 - 4.0 V RDS(ON) Static Drain-Source On-state Resis- tance VGS =10 V, ID = 37.5A - 0.012 0.015 Ω Dynamic Characteristics Ciss Input Capacitance VGS =0 V, VDS =25V, f = 1MHz - 2600 3380 pF Coss Output Capacitance - 940 1220 Crss Reverse Transfer Capacitance - 210 275 Dynamic Characteristics td(on) Turn-on Delay Time VDD =40V, ID =75A, RG =25Ω (Note 4, 5) - 30 70 ns tr Rise Time - 225 460 td(off) Turn-off Delay Time - 165 340 tf Fall Time - 155 320 Qg Total Gate Charge VDS =64V, VGS =10V, ID =75A (Note 4, 5) - 80 105 nC Qgs Gate-Source Charge - 15 - Qgd Gate-Drain Charge(Miller Charge) - 32 - Source-Drain Diode Ratings and Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Unit. IS Continuous Source Current Integral Reverse p-n Junction Diode in the MOSFET -- 75 A ISM Pulsed Source Current - - 300 VSD Diode Forward Voltage IS =75A, VGS =0V - - 1.5 V trr Reverse Recovery Time IS=75A, VGS=0V, dIF/dt=100A/us -90 - ns Qrr Reverse Recovery Charge - 250 - uC ※ NOTES 1. Repeativity rating : pulse width limited by junction temperature 2. L = 0.32mH, IAS =75A, VDD = 25V, RG = 25Ω , Starting TJ = 25°C 3. ISD ≤ 75A, di/dt ≤ 300A/us, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2% 5. Essentially independent of operating temperature. 75A 80V N Channel Mosfet Transistor |
Nº de peça semelhante - FM75N08 |
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Descrição semelhante - FM75N08 |
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