LC898217XH

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6

7. Electrical Characteristics

Item

Symbol

Condition

Rating

Unit

Supply voltage

VDD33 max

Ta ≤ 25°C

−0.3 to 4.6

V

Input/output voltage

VI33, VO33

Ta ≤ 25°C

−0.3 to VDD33+0.3

V

Storage ambient

temperature

Tstg

−55 to 125

°C

Operating ambient

temperature

Topr

−30 to 70

°C

3 V power supply (VDD)

Item

Symbol

Min

Typ

Max

Unit

Supply voltage

VDD33

2.6

2.8

3.3

V

Input voltage range

VIN

0

VDD33

V

Item

Symbol

Condition

Min

Typ

Max

Unit

Applicable pins

Maximum current

Ifull

105

115

mA

OUT1, OUT2

Output leak current

Ioleak

1

µA

5) Non-volatile Memory Characteristics

Item

Symbol

Condition

Min

Typ

Max

Unit

Applicable circuit

Endurance

EN

1000

Cycles

EEPROM

Data retention

RT

10

Years

Write time

tWT

20

ms

Item

Symbol

Condition

Min

Typ

Max

Unit

Applicable pins

High-level input voltage

VIH

CMOS

compliant

Schmidt

1.4

V

SCL, SDA,

PORT

Low-level input voltage

VIL

0.4

V

High-level output voltage

VOH

IOL =

−2 mA

VDD−0.4

V

PORT

Low-level output voltage

VOL

IOL = 2 mA

0.4

V

SDA, PORT

Pulldown resistor

Rdn

50

220

k

Ω

PORT

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,

damage may occur and reliability may be affected.

Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended

Operating Ranges limits may affect device reliability.

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be

indicated by the Electrical Characteristics if operated under different conditions.