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STB0FS12A Folha de dados(PDF) 3 Page - Seoul Semiconductor |
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STB0FS12A Folha de dados(HTML) 3 Page - Seoul Semiconductor |
3 / 20 page www.seoulsemicon.com Product Data Sheet STB0FS12A - Mid-Power LED 3 Rev.00, March 1, 2014 Performance Characteristics Table 2. Characteristics, I F=150mA, Ta=25ºC, RH30% Table 3. Absolute Maximum Ratings Notes : (1) 2Θ 1/2 is the off-axis where the luminous intensity is 1/2 of the peak intensity. (2) Thermal resistance is junction to T S point (Refer to page 12). • Calculated performance values are for reference only. • All measurements were made under the standardized environment of SSC. Parameter Symbol Value Unit Forward Current I F 300 mA Power Dissipation P D 1.1 W Junction Temperature T j 125 ºC Operating Temperature T opr -30 ~ + 100 ºC Storage Temperature T stg -40 ~ + 100 ºC Parameter Symbol Value Unit Min. Typ. Max. Forward Current I F - 150 - mA Forward Voltage V F - 3.2 - V Radiant Power - - 260 - mW Dominant Wavelength λ dom 450 - 460 nm Viewing Angle [1] 2 Θ 1/2 - 140 - Deg. Junction Temperature T j - - 125 ºC Storage Temperature T stg - 40 - + 100 ºC Thermal resistance (J to S) [2] Rθ j-s - 17 - ℃/W ESD Sensitivity(HBM) - 5k - - V |
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Descrição semelhante - STB0FS12A |
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