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BTA10-1200 Folha de dados(PDF) 4 Page - Sirectifier Semiconductors |
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BTA10-1200 Folha de dados(HTML) 4 Page - Sirectifier Semiconductors |
4 / 4 page F ig.7 : R elative variation of gate trigger current, holding current and latching current vers us junction temperature (typical values). F ig.8 : R elative variation of critical rate of decreas e of main current versus (dV /dt)c (typical values). F ig. 9 : R elative variation of critical rate of decreas e of main current vers us junction temperature. -40 -20 0 20 40 60 80 100 120 140 0.0 0.5 1.0 1.5 2.0 2.5 T j(°C ) IG T,IH,IL [T j] / IG T ,IH,IL [T j=25°C ] IG T IH & IL 0.1 1.0 10.0 100.0 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 (dV /dt)c (V /µs ) (dI/dt)c [(dV /dt)c] / S pecified (dI/dt)c B W/C W C B 0 25 50 75 100 125 0 1 2 3 4 5 6 T j (°C ) (dI/dt)c [T j] / (dI/dt)c [T j s pecified] BTA10 Discrete Triacs(Isolated) P4 ©2008 SIRECTIFIER All rights reserved, Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: sales@sirectifier.com www.sirectifier.com |
Nº de peça semelhante - BTA10-1200 |
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Descrição semelhante - BTA10-1200 |
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