2SD1047 datasheet(2/7 Pages) FOSHAN

Nome de Peças	2SD1047

Descrição Electrónicos	Silicon NPN transistor in a TO-3P Plastic Package.

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Fabricante Electrônico	FOSHAN [Foshan Blue Rocket Electronics Co.,Ltd.]

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2 / 7 page

2SD1047

Rev.E Mar.-2016

DATA SHEET

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参数

Parameter

符号

Symbol

数值

Rating

单位

Unit

Collector to Base Voltage

VCBO

160

V

Collector to Emitter Voltage

VCEO

140

V

Emitter to Base Voltage

VEBO

6

V

Collector Current - Continuous

IC

12

A

Base Current

ICP

15

A

Collector Power Dissipation

PC(TC=25 )

℃

100

W

Junction Temperature

Tj

150

℃

Storage Temperature Range

Tstg

-40～150

℃

参数

Parameter

符号

Symbol

测试条件

Test Conditions

最小值

Min

典型值

Typ

最大值

Max

单位

Unit

Collector to Emitter Breakdown

Voltage

VCEO

IC=50mA

IB=0

140

V

Collector Cut-Off Current

ICBO

VCB=80V

IE=0

0.1

mA

Emitter Cut-Off Current

IEBO

VEB=4.0V

IC=0

0.1

mA

DC Current Gain

hFE(1)

VCE=5.0V

IC=1.0A

80

160

hFE(2)

VCE=5.0V

IC=6.0A

20

Collector to Emitter Saturation

Voltage

VCE(sat)

IC=6.0A

IB=0.6A

0.6

2.5

V

Base to Emitter Voltage

VBE

VCE=5.0V

IC=5.0A

1.5

V

Transition Frequency

fT

VCE=5.0V

IC=1.0A

f=1.0MHz

15

MHz

Collector Output Capacitance

Cob

VCB=10V

IE=0

f=1.0MHz

210

pF

Turn-On Time

Ton

10IB1=-10IB2=IC=1A

0.26

μs

Full Time

tf

10IB1=-10IB2=IC=1A

0.68

μs

Storage Time

tstg

10IB1=-10IB2=IC=1A

6.88

μs

极限参数 / Absolute Maximum Ratings(Ta=25℃)

电性能参数 / Electrical Characteristics(Ta=25℃)

Nº de peça semelhante - 2SD1047

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