2SC4159 datasheet(2/6 Pages) FOSHAN

Nome de Peças	2SC4159

Descrição Electrónicos	Silicon NPN transistor in a TO-220F Plastic Package.

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Fabricante Electrônico	FOSHAN [Foshan Blue Rocket Electronics Co.,Ltd.]

Página de início	http://www.fsbrec.com/

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2 / 6 page

2SC4159

Rev.F Mar.-2016

DATA SHEET

http://www.fsbrec.com

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参数

Parameter

符号

Symbol

数值

Rating

单位

Unit

Collector to Base Voltage

VCBO

180

V

Collector to Emitter Voltage

VCEO

160

V

Emitter to Base Voltage

VEBO

6.0

V

Collector Current - Continuous

IC

1.5

A

Collector Current – Continuous(Pulse)

Icp

3.0

A

Collector Power Dissipation

PC(Tc=25 )

℃

15

W

Junction Temperature

Tj

150

℃

Storage Temperature Range

Tstg

-55～150

℃

参数

Parameter

符号

Symbol

测试条件

Test Conditions

最小值

Min

典型值

Typ

最大值

Max

单位

Unit

Collector to Base Breakdown

Voltage

VCBO

IC=1.0mA

IE=0

180

V

Collector to Emitter Breakdown

Voltage

VCEO

IC=1.0mA

RBE=∞

160

V

Emitter to Base Breakdown Voltage

VEBO

IE=1.0mA

IC=0

6.0

V

Collector Cut-Off Current

ICBO

VCB=120V

IE=0

10

μA

Emitter Cut-Off Current

IEBO

VEB=4.0V

IC=0

10

μA

DC Current Gain

hFE

VCE=5.0V

IC=300mA

60

200

Collector to Emitter Saturation

Voltage

VCE(sat) IC=500mA

IB=50mA

0.3

V

Base to Emitter Voltage

VBE

VCE=5.0V

IC=10mA

1.5

V

Transition Frequency

fT

VCE=10V

IC=50mA

100

MHz

Collector output capacitance

Cob

VCB=10V

f=1.0MHz

23

pF

极限参数 / Absolute Maximum Ratings(Ta=25℃)

电性能参数 / Electrical Characteristics(Ta=25℃)

Nº de peça semelhante - 2SC4159

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