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TC55NEM208AFTN55 Folha de dados(PDF) 7 Page - Toshiba Semiconductor |
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TC55NEM208AFTN55 Folha de dados(HTML) 7 Page - Toshiba Semiconductor |
7 / 10 page TC55NEM208AFPN/AFTN55,70 2002-09-18 7/10 DATA RETENTION CHARACTERISTICS (Ta = −40° to 85°C) SYMBOL PARAMETER MIN TYP MAX UNIT VDH Data Retention Supply Voltage 2.0 5.5 V Ta = −40~40°C 3 IDDS2 Standby Current Ta = −40~85°C 20 µA tCDR Chip Deselect to Data Retention Mode Time 0 ns tR Recovery Time 5 ms CONTROLLED DATA RETENTION MODE Note: When CE is operating at the VIH level (2.2V), the standby current is given by IDDS1 during the transition of VDD from 4.5 to 2.4V. CE VDD 4.5 V GND VIH DATA RETENTION MODE tR (See Note) (See Note) tCDR VDD − 0.2 V CE |
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