2SD1899-Z datasheet(1/3 Pages) JIANGSU

Nome de Peças	2SD1899-Z

Descrição Electrónicos	TO-251-3L Plastic-Encapsulate Transistors

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Fabricante Electrônico	JIANGSU [Jiangsu Changjiang Electronics Technology Co., Ltd]

Página de início	http://www.cj-elec.com/en/

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-251-3L Plastic-Encapsulate Transistors

2SD1899-Z TRANSISTOR (NPN)

FEATURES

High hFE

Low VCE(sat)

MAXIMUM RATINGS (Ta=25

℃ unless otherwise noted)

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

60

V

VCEO

Collector-Emitter Voltage

60

V

VEBO

Emitter-Base Voltage

7

V

IC

Collector Current -Continuous

3

A

PC

Collector Power Dissipation

1

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-55-150

℃

ELECTRICAL CHAR ACTERISTICS (Ta=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

M

in

T

yp

Max

U

nit

Collector-base breakdown voltage

V(BR)CBO

IC=100μA,IE=0

60

V

Collector-emitter breakdown voltage

V(BR)CEO

IC =1mA,IB=0

60

V

Emitter-base breakdown voltage

V(BR)EBO

IE=100μA,IC=0

7

V

Collector cut-off current

ICBO

VCB=60V,IE=0

10

μA

Emitter cut-off current

IEBO

VEB=7V,IC=0

10

μA

hFE(1)

VCE=2V,IC=200mA

60

hFE(2)

VCE=2V,IC=600mA

100

400

DC current gain

hFE(3)

VCE=2V,IC=2A

50

Collector-emitter saturation voltage

VCE(sat)

IC=1.5A,IB=150mA

0.25

V

Base-emitter saturation voltage

VBE(sat)

IC=1.5A,IB=150mA

1.2

V

Transition frequency

fT

VCE=5V,IC=1.5A

120

MHz

Collector output capacitance

Cob

VCB=10V,IE=0,f=1MHz

30

pF

Turn on Time

ton

0.5

Storage Time

tstg

2.0

Switching Time

Fall Time

tf

VCC=10V,IC=1A,IB1=-IB2=-0.1A

0.5

μs

CLASSIFICATION OF h FE(2)

Rank

M

L

K

Range

100-200

160-320

200-400

TO-251

-3L

1.BASE

2.COLLECTOR

3.EMITTER

www.cj-elec.com

1

D,Nov,2014

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