BC640 datasheet(2/4 Pages) JIANGSU

Nome de Peças	BC640

Descrição Electrónicos	TO-92 Plastic-Encapsulate Transistors

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Fabricante Electrônico	JIANGSU [Jiangsu Changjiang Electronics Technology Co., Ltd]

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a

T =25

unless otherwise specified

Parameter

Symbol

Test

conditions

M

in

T

yp

M

ax

U

nit

Collector-base breakdown voltage

V(BR)CBO

IC=-100μA,IE=0

BC636

BC638

BC640

-45

-60

-100

V

Collector-emitter breakdown voltage

V(BR)CEO

IC =-1mA,IB=0

BC636

BC638

BC640

-45

-60

-80

V

Emitter-base breakdown voltage

V(BR)EBO

IE=-100μA,IC=0

-5

V

Collector cut-off current

ICBO

VCB=-30V,IE=0

-0.1

μA

Emitter cut-off current

IEBO

VEB= -5V,IC=0

- 0.1

μA

DC current gain

hFE(1)

VCE= -2V,IC=- 5mA

40

hFE(2)

VCE= -2V,IC=- 150mA

63

250

hFE(3)

VCE= -2V,IC=- 500mA

25

Collector-emitter saturation voltage

VCE(sat)

IC=- 500mA,IB= -50mA

-0.5

V

Base-emitter voltage

VBE

VCE= -2V,IC= -500mA

- 1

V

Transition frequency

fT

VCE= -5V,IC=- 50mA,f=100MHz

100

MHz

CLASSIFICATION OF hFE(2)

Rank

BC636-10

BC636-16, BC638-16, BC640-16

Range

63-160

100-250

Nº de peça semelhante - BC640

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Motorola, Inc	BC640	116Kb / 4P	High Current Transistors
NXP Semiconductors	BC640	143Kb / 15P	80 V, 1 A PNP medium power transistors Rev. 08-22 February 2008
ON Semiconductor	BC640	86Kb / 4P	High Current Transistors(PNP Silicon) June, 2000 ??Rev. 1
Micro Commercial Compon...	BC640	367Kb / 2P	PNP Epitaxial Silicon Transistors
NXP Semiconductors	BC640	43Kb / 8P	PNP medium power transistors 1999 Apr 23

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Descrição semelhante - BC640

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BC640 Folha de dados(PDF) 2 Page - Jiangsu Changjiang Electronics Technology Co., Ltd

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Nº de peça semelhante - BC640

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