KTA2015 datasheet(1/3 Pages) JIANGSU

Nome de Peças	KTA2015

Descrição Electrónicos	SOT-323 Plastic-Encapsulate Transistors

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Fabricante Electrônico	JIANGSU [Jiangsu Changjiang Electronics Technology Co., Ltd]

Página de início	http://www.cj-elec.com/en/

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-323 Plastic-Encapsulate Transistors

KTA2015

TRANSISTOR (PNP)

FEATURES

 Excellent hFE Linearity

 Complementary to KTC4076

APPLICATIONS

 General Purpose Switching

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

-35

V

VCEO

Collector-Emitter Voltage

-30

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current

-500

mA

PC

Collector Power Dissipation

100

mW

RΘJA

Thermal Resistance From Junction To Ambient

1250

℃/W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature

-55～+150

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

V(BR)CBO

IC=-100µA, IE=0

-35

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=-1mA, IB=0

-30

V

Emitter-base breakdown voltage

V(BR)EBO

IE=-100µA, IC=0

-5

V

Collector cut-off current

ICBO

VCB=-35V, IE=0

-0.1

µA

Emitter cut-off current

IEBO

VEB=-5V, IC=0

-0.1

µA

hFE(1)

VCE=-1V, IC=-100mA

70

240

DC current gain

hFE(2)

VCE=-6V, IC=-400mA

25

Collector-emitter saturation voltage

VCE(sat)

IC=-100mA, IB=-10mA

-0.25

V

Base-emitter voltage

VBE

VCE=-1V, IC=-100mA

-1

V

Transition frequency

fT

VCB=-6V,IC=-20mA ,

200

MHz

Collector output capacitance

Cob

VCB=-6V, IE=0, f=1MHz

13

pF

CLASSIFICATION OF

hFE(1), hFE(2)

RANK

O(2)

Y(4)

O

Y

RANG

hFE(1)

70–140

120–240

hFE(2)

25Min

40Min

MARKING

ZO

ZY

ZO

ZY

SOT–323

1. BASE

2. EMITTER

3. COLLECTOR

www.cj-elec.com

1

A,Jun,2014

www.cj-elec.com

B,Sep,2014

JC T

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