KTD1304 datasheet(1/4 Pages) JIANGSU

Nome de Peças	KTD1304

Descrição Electrónicos	SOT-23 Plastic-Encapsulate Transistors

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Fabricante Electrônico	JIANGSU [Jiangsu Changjiang Electronics Technology Co., Ltd]

Página de início	http://www.cj-elec.com/en/

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD

SOT-23 Plastic-Encapsulate Transistors

KTD1304

TRANSISTOR (NPN)

FEATURES

·High emitter-base voltage

·low on resistance

MARKING: MAX

ELECTRICAL CHARACTERISTICS (Ta=25

℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

V(BR)CBO

IC=100μA, IE=0

25

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=1mA, IB=0

20

V

Emitter-base breakdown voltage

V(BR)EBO

IE=100μA, IC=0

12

V

Collector cut-off current

ICBO

VCB=25 V, IE=0

0.1

μA

Emitter cut-off current

IEBO

VEB=12V, IC=0

0.1

μA

hFE(FOR)

VCE=2V, IC=4 mA

200

1000

DC current gain

hFE(REV)

VCE= 2V, IC= 4mA

20

Collector-emitter saturation voltage

VCE(sat)

IC= 100mA, IB=10 mA

0.25

V

Base-emitter saturation voltage

VBE(sat)

IC= 100mA, IB=10mA

1

V

Transition frequency

fT

VCE=10V, IC= 1mA

f=100MHz

60

MHz

output capacitance

Cob

VCB=10V,IE=0,f=1MHz

10

pF

On resistance

R(on)

Vin=0.3V,IB=1mA,f=1KHZ

0.6

Ω

SOT-23

1. BASE

2. EMITTER

3.COLLECTOR

www.cj-elec.com

1

A,Jun,2014

www.cj-elec.com

C,Oct,2014

JC T

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

25

V

VCEO

Collector-Emitter Voltage

20

V

VEBO

Emitter-Base Voltage

12

V

IC

Collector Current

300

mA

PC

Collector Power Dissipation

200

mW

RΘJA

Thermal Resistance From Junction To Ambient

625

℃/W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature

-55～+150

℃

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