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AM20N25-1000D Folha de dados(PDF) 1 Page - Analog Power |
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AM20N25-1000D Folha de dados(HTML) 1 Page - Analog Power |
1 / 5 page Analog Power AM20N25-1000D N-Channel 250-V (D-S) MOSFET VDS (V) ID (A) 5.6 5.2 Symbol Limit Units VDS 250 VGS ±20 Continuous Drain Current a TC=25°C ID 5.6 IDM 20 IS 5.6 A Power Dissipation a TC=25°C PD 50 W TJ, Tstg -55 to 175 °C Symbol Maximum Units RθJA 40 RθJC 3 Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature PRODUCT SUMMARY 250 rDS(on) (mΩ) A THERMAL RESISTANCE RATINGS Continuous Source Current (Diode Conduction) a Maximum Junction-to-Case ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) V Parameter Drain-Source Voltage Gate-Source Voltage Parameter Maximum Junction-to-Ambient a °C/W Pulsed Drain Current b Operating Junction and Storage Temperature Range 1080 @ VGS = 10V 1280 @ VGS = 6V Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits © Preliminary 1 Publication Order Number: DS_AM20N25-1000D_1A |
Nº de peça semelhante - AM20N25-1000D |
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Descrição semelhante - AM20N25-1000D |
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