PZT2907A datasheet(1/4 Pages) JIANGSU

Nome de Peças	PZT2907A

Descrição Electrónicos	SOT-223 Plastic-Encapsulate Transistors

Download	4 Pages

Scroll/Zoom	100%

Fabricante Electrônico	JIANGSU [Jiangsu Changjiang Electronics Technology Co., Ltd]

Página de início	http://www.cj-elec.com/en/

Logo

1 / 4 page

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-223 Plastic-Encapsulate Transistors

PZT2907A

TRANSISTOR (PNP)

FEATURES

Epitaxial planar die construction

Complementary PNP Type available(PZT2222A)

MAXIMUM RATINGS (Ta=25

unless otherwise noted)

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

-60

V

VCEO

Collector-Emitter Voltage

-60

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current -Continuous

-0.6

A

PC

Collector Power Dissipation

1

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-55

~+150

ELECTRICAL CHARACTERISTICS (Ta=25

℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

V(BR)CBO

IC=-10μA,IE=0

-60

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=-10mA,IB=0

-60

V

Emitter-base breakdown voltage

V(BR)EBO

IE=-10μA,IC=0

-5

V

Collector cut-off current

ICBO

VCB=-50V,IE=0

-10

nA

Emitter cut-off current

IEBO

VEB=-5V,IC=0

-50

nA

hFE(1)

VCE=-10V,IC=-0.1mA

75

hFE(2)

VCE=-10V,IC=-1mA

100

hFE(3)

VCE=-10V,IC=-10mA

100

hFE(4)

VCE=-10V,IC=-150mA

100

300

DC current gain

hFE(5)

VCE=-10V,IC=-500mA

50

VCE(sat)

IC=-150mA,IB=-15mA

-0.4

V

Collector-emitter saturation voltage

VCE(sat)

IC=-500mA,IB=-50mA

-1.6

V

VBE(sat)

IC=-150mA,IB=-15mA

-1.3

V

Base-emitter saturation voltage

VBE(sat)

IC=-500mA,IB=-50mA

-2.6

V

Transition frequency

fT

VCE=-20V,IC=-50mA,f=100MHz

200

MHz

Collector

capacitance

Cc

VCB=-10V,IE=0,f=1MHz

8

pF

Emitter capacitance

CE

VEB=-2V,IC=0,f=1MHz

30

pF

Delay time

td

12

n

s

Rise time

tr

30

n

s

Storage time

tS

300

n

s

Fall time

tf

IC=-150mA IB1=- IB2=- 15mA

65

n

s

SOT-223

1. BASE

2. COLLECTOR

3. EMITTER

℃

MARKING:

Solid dot = Green molding compound device,

if none,the normal device.

www.cj-elec.com

1

D,Jan,2017

Nº de peça semelhante - PZT2907A

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Motorola, Inc	PZT2907A	139Kb / 6P	SOT-223 PACKAGE PNP SILICON TRANSISTOR SURFACE MOUNT
Fairchild Semiconductor	PZT2907A	685Kb / 11P	PN2907A / MMBT2907A / PZT2907A 60 V PNP General Purpose Transistor
ON Semiconductor	PZT2907A	139Kb / 6P	PNP SILICON TRANSISTOR SURFACE MOUNT 1996 REV 4
SHENZHEN YONGERJIA INDU...	PZT2907A	161Kb / 1P	TRANSISTOR (PNP)
NXP Semiconductors	PZT2907A	46Kb / 8P	PNP switching transistor 1999 Apr 14

More results

Descrição semelhante - PZT2907A

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Jiangsu Changjiang Elec...	PZTA94	1Mb / 4P	SOT-223 Plastic-Encapsulate Transistors
Nanjing International G...	PZT3906	1Mb / 4P	SOT-223 Plastic-Encapsulate Transistors
	PZT4403	1Mb / 4P	SOT-223 Plastic-Encapsulate Transistors
	PZTA56	1Mb / 4P	SOT-223 Plastic-Encapsulate Transistors
	BCP54	1Mb / 4P	SOT-223 Plastic-Encapsulate Transistors
	CZT5551	1Mb / 4P	SOT-223 Plastic-Encapsulate Transistors
Jiangsu Changjiang Elec...	BCP69	1,017Kb / 3P	SOT-223 Plastic-Encapsulate Transistors
Nanjing International G...	CZT32C	1Mb / 4P	SOT-223 Plastic-Encapsulate Transistors
	BCP56	1Mb / 4P	SOT-223 Plastic-Encapsulate Transistors
	PZTA06	1Mb / 4P	SOT-223 Plastic-Encapsulate Transistors

More results

PZT2907A Folha de dados(PDF) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd

PZT2907A Folha de dados(HTML) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd

Nº de peça semelhante - PZT2907A

Descrição semelhante - PZT2907A

Html Pages

1 2 3 4

Folha de dados Download

Ligação URL