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MMBT720 Folha de dados(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

Nome de Peças MMBT720
Descrição Electrónicos  -1.5A , -40V PNP Plastic Encapsulated Transistor
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Fabricante Electrônico  SECOS [SeCoS Halbleitertechnologie GmbH]
Página de início  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

MMBT720 Folha de dados(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

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Elektronische Bauelemente
MMBT720
-1.5A , -40V
PNP Plastic Encapsulated Transistor
17-Feb-2017 Rev. C
Page 2 of 3
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
ELECTRICAL CHARACTERISTICS (T
A=25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Collector-Base Breakdown Voltage
V(BR)CBO
-40
-
-
V
IC= -100µA, IE=0
Collector-Emitter Breakdown Voltage
1
V(BR)CEO
-40
-
-
V
IC= -10mA, IB=0
Emitter-Base Breakdown Voltage
V(BR)EBO
-5
-
-
V
IE= -100µA, IC=0
Collector Cut-Off Current
ICBO
-
-
-0.1
µA
VCB= -35V, IE=0
Collector Cut-Off Current
ICES
-
-
-0.1
µA
VCE= -35V, VBE=0
Emitter Cut-Off Current
IEBO
-
-
-0.1
µA
VEB= -4V, IC=0
300
-
-
VCE= -2V, IC= -10mA
300
-
-
VCE= -2V, IC= -100mA
180
-
-
VCE= -2V, IC= -1A
60
-
-
VCE= -2V, IC= -1.5A
DC Current Gain
1
hFE
12
-
-
VCE= -2V, IC= -3A
-
-
-40
IC= -100mA, IB = -10mA
-
-
-220
IC= -1A, IB = -50mA
Collector-Emitter Saturation Voltage
1
VCE(sat)
-
-
-330
mV
IC= -1.5A, IB = -100mA
Base-Emitter Saturation Voltage
1
VBE(sat)
-
-
-1
IC= -1.5A, IB= -75mA
Base-emitter voltage
1
VBE(on)
-
-
-1
V
VCE= -2V, IC= -1.5A
Transition frequency
fT
150
-
-
MHz
VCE= -10V,IC= -50mA, f=100MHz
Collector output capacitance
Cob
-
-
25
pF
VCB= -10V, f=1MHz
Turn-on Time
t(on)
-
40
-
Turn-off Time
t(off)
-
435
-
nS
VCC= -15V,IC= -0.75A,
IB1= IB2= -15mA
Note:
1.
Measured under pulse conditions . Pulse width =300µs. Duty cycle≤2%.


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