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IRFE430 Folha de dados(PDF) 2 Page - International Rectifier |
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IRFE430 Folha de dados(HTML) 2 Page - International Rectifier |
2 / 8 page 2 www.irf.com IRFE430, JANTX-, JANTXV-, 2N6802U Device Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter Min Typ Max Units Test Conditions BVDSS Drain-to-Source Breakdown Voltage 500 — — V VGS =0 V, ID = 1.0mA ∆BVDSS/∆TJ Temperature Coefficient of Breakdown — 0.59 — V/°C Reference to 25°C, ID = 1.0mA Voltage RDS(on) Static Drain-to-Source — — 1.50 VGS = 10V, ID = 1.5A On-State Resistance — — 1.725 Ω VGS = 10V, ID = 2.5A VGS(th) Gate Threshold Voltage 2.0 — 4.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 2.0 — — S ( )VDS > 15V, IDS = 1.5A IDSS Zero Gate Voltage Drain Current — — 25 VDS= 0.8 x Max Rating,VGS=0V — — 250 VDS = 0.8 x Max Rating VGS = 0V, TJ = 125°C IGSS Gate-to-Source Leakage Forward — — 100 VGS = 20 V IGSS Gate-to-Source Leakage Reverse — — -100 VGS = -20V Qg Total Gate Charge — — 30 VGS = 10V, ID = 2.5A Qgs Gate-to-Source Charge — — 4.5 nC VDS = Max Rating x 0.5 Qgd Gate-to-Drain (‘Miller’) Charge — — 28 td(on) Turn-On Delay Time — — 30 VDD = 250V, ID = 2.5A, tr Rise Time — — 30 RG = 7.5Ω td(off) Turn-Off Delay Time — — 55 tf Fall Time — — 30 LD Internal Drain Inductance — 1.8 — LS Internal Source Inductance — 4.3 — Ciss Input Capacitance — 750 — VGS = 0V, VDS = 25 V Coss Output Capacitance — 240 — pF f = 1.0MHz Crss Reverse Transfer Capacitance — 67 — Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units Test Conditions IS Continuous Source Current (Body Diode) — — 2.5 ISM Pulse Source Current (Body Diode) —— 11 VSD Diode Forward Voltage — — 1.4 V Tj = 25°C, IS = 2.5A, VGS = 0V trr Reverse Recovery Time — — 900 ns Tj = 25°C, IF = 2.5A, di/dt ≤ 100A/µs QRR Reverse Recovery Charge — — 2.0 µC VDD ≤ 50V ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. A Modified MOSFET symbol showing the integral reverse p-n junction rectifier. nA nH ns Measured from drain pad to die. Measured from center of source pad to the end of source bonding wire. Modified MOSFET symbol show- ing the internal inductances. µA Thermal Resistance Parameter Min Typ Max Units Test Conditions RthJC Junction-to-Case — — 5.0 K/W RthJPCB Junction-to-PC Board — — 19 Soldered to a copper clad PC board Details of notes through
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Nº de peça semelhante - IRFE430 |
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Descrição semelhante - IRFE430 |
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