Os motores de busca de Datasheet de Componentes eletrônicos
Selected language  

  Portuguese  ▼

nome da peças
         descrição  


SL10T80 Datasheet(Folha de dados) 1 Page - Zibo Seno Electronic Engineering Co.,Ltd

Nome de Peças. SL10T80
descrição  10A SURFACE MOUNT SCHOTTKY BARRIER DIODE
Download  3 Pages
Scroll/Zoom Zoom In 100% Zoom Out
Fbricantes  ZSELEC [Zibo Seno Electronic Engineering Co.,Ltd]
Página de início  http://www.senocn.com/en/index.html
Logo 

   
 1 page
background image
Case:TO-277B Molded Plastic "Green" Molding Compound
Excellent High Temperature Stability
Lead Free: For RoHS/Lead Free Version
High Thermal Reliability
Ultra Low Power Loss, High Efficiency
High Foward Surge Capability
High Junction Temperture
Bypass Diodes for Solar Panels
Features
!
!
!
!
Mechanical Data
!
!
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
!
Polarity: Cathode Band
!
Mounting Position: Any
!
Marking: Type Number
Maximum Ratings and Electrical Characteristics @T
A=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
1 of 3
!
Patented Super Barrier Rectifier Technology
!
!
!
Top View
Bottom View
LEFT PIN
RIGHT PIN
Note: Pins Left & Right must
be electrically connected
at the printed circuit board.
BOTTOMSIDE
HEAT SINK
Z ibo Seno Electronic Engineering Co., Ltd.
www.senocn.com
SL10T80-SL10T200
SL10T80-SL10T200
!
Schottky Barrier Chip
10T120
10T80
SL
-55 to +150
-55 to +150
56
DC
At Rated DC Blocking Voltage
T =100
Peak Reverse Curent
T =25
Junctionto Ambient
Typical Thermal Resistance
Average Rectified Output Current
(Note1)
Unit
V
A
mA
℃ /W
storage temperature range
Note:1.Valid Provided that are kept at ambient temperature at a distance of 9.5mm from the case.
2.Fr-4pcb.2oz.Copper,minimum recommend pad layout .18.8mm×14.4.Anode pad dimensions 5.6mm×14.4mm.
Operating junction temperature range
0.3
10
VR(RMS)
Non-Repetitive Peak Forward Surge8.3ms
Single Half Sine-Wave Superimposed on rated
10
Parameter
Symbol
V RRM
80
DC blocking voltage
V
load(JEDEC Method)
Working Peak Reverse Voltage
Peak Repetitive Reverse Voltage
VRWM
V
V
A
200
RMS Rectified Voltage
(Note2)
IO
IFSM
V FM
IR
RθJA
RθJL
TJ
TSTG
A
A
SL
SL
10T150
SL
10T200
SL
200
140
T =25
@IF=5A
A
T =25
@IF=10A
A
Typ
Max.
-
Forward Voltage Drop
T =25
@IF=1A
A
0.38
0.50
0.63
0.57
A
t
I 2 t Rating for Fusing (t < 8.3ms)
2
2s
I
166
10T100
100
70
120
84
150
105
110
3.5
Typ
Max.
-
0.38
0.50
0.64
0.59
-
Typ
Max.
-
0.46
0.64
0.79
0.73
-
Typ
Max.
-
0.49
0.67
0.80
0.74
10A SURFACE MOUNT SCHOTTKY BARRIER DIODE
-
-
Typ
Max.
-
0.62
0.73
0.86
0.81
-




Html Pages

1  2  3 


Datasheet Download




Ligação URL

ALLDATASHEET é util para você?  [ DONATE ]  

Sobre Alldatasheet   |  Publicidade   |   Contato conosco    |   Política de Privacidade   |   Favoritos   |  Troca de Link    |  Lista de Fabricantes
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  , Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp  |   Russian : Alldatasheetru.com
Korean : Alldatasheet.co.kr   |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com  |   Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl