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EC733339 Folha de dados(PDF) 2 Page - E-CMOS Corporation

Nome de Peças EC733339
Descrição Electrónicos  -30V, -4.1A P-Channel MOSFET
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Fabricante Electrônico  E-CMOS [E-CMOS Corporation]
Página de início  http://www.ecmos.com.tw/
Logo E-CMOS - E-CMOS Corporation

EC733339 Folha de dados(HTML) 2 Page - E-CMOS Corporation

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EC733339
-30V、
、-4.1A P-Channel MOSFET
E-CMOS Corp. (www.ecmos.com.tw)
Page 2 of 6
4K27N-Rev.F001
Symbol
Parameter
Min.
Typ.
Max.
Units
Conditions
V(BR)DSS
Drain-to-Source breakdown voltage
-30
V
VGS = 0V, ID = -250µA
37
52
VGS=-10V,ID = -4.1A
RDS(on)
Static Drain-to-Source on-resistance
54
87
m
VGS=-4.5V,ID = -3A
-1
-3
VGS(th)
Gate threshold voltage
-1.4
V
VDS = VGS, ID = -250µA
TJ = 125°C
-1
IDSS
Drain-to-Source leakage current
-50
µA
VDS = -24V,VGS = 0V
TJ = 125°C
100
VGS =20V
IGSS
Gate-to-Source forward leakage
-100
nA
VGS = -20V
Qg
Total gate charge
17
Qgs
Gate-to-Source charge
2.5
Qgd
Gate-to-Drain("Miller") charge
5.0
nC
ID = -6A,
VDS=-25V,
VGS = -10V
td(on)
Turn-on delay time
7.2
tr
Rise time
4.8
td(off)
Turn-Off delay time
24
tf
Fall time
11
ns
VGS=-10V, VDS =-25V,
RGEN=3 ,
Ciss
Input capacitance
665
Coss
Output capacitance
108
Crss
Reverse transfer capacitance
83
pF
VGS = 0V,
VDS =-15V,
ƒ = 1MHz
Symbol
Parameter
Min.
Typ.
Max.
Units
Conditions
IS
Continuous Source Current
(Body Diode)
-4.1
A
ISM
Pulsed Source Current
(Body Diode)
-20
A
MOSFET symbol
showing the
integral reverse
p-n junction diode.
VSD
Diode Forward Voltage
-0.79
-1.0
V
IS=1A, VGS=0V
trr
Reverse Recovery Time
9.7
ns
Qrr
Reverse Recovery Charge
3.8
nC
TJ = 25°C, IF =-6A,
di/dt = 100A/µs
Electrical Characteristics (TA=25℃
℃ unless otherwise noted)
Source-Drain Ratings and Characteristics


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