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EC733339 Folha de dados(PDF) 2 Page - E-CMOS Corporation |
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EC733339 Folha de dados(HTML) 2 Page - E-CMOS Corporation |
2 / 6 page EC733339 -30V、 、 、 、-4.1A P-Channel MOSFET E-CMOS Corp. (www.ecmos.com.tw) Page 2 of 6 4K27N-Rev.F001 Symbol Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source breakdown voltage -30 — — V VGS = 0V, ID = -250µA — 37 52 VGS=-10V,ID = -4.1A RDS(on) Static Drain-to-Source on-resistance — 54 87 m VGS=-4.5V,ID = -3A -1 — -3 VGS(th) Gate threshold voltage — -1.4 — V VDS = VGS, ID = -250µA TJ = 125°C — — -1 IDSS Drain-to-Source leakage current — — -50 µA VDS = -24V,VGS = 0V TJ = 125°C — — 100 VGS =20V IGSS Gate-to-Source forward leakage — — -100 nA VGS = -20V Qg Total gate charge — 17 — Qgs Gate-to-Source charge — 2.5 — Qgd Gate-to-Drain("Miller") charge — 5.0 — nC ID = -6A, VDS=-25V, VGS = -10V td(on) Turn-on delay time — 7.2 — tr Rise time — 4.8 — td(off) Turn-Off delay time — 24 — tf Fall time — 11 — ns VGS=-10V, VDS =-25V, RGEN=3 , Ciss Input capacitance — 665 — Coss Output capacitance — 108 — Crss Reverse transfer capacitance — 83 — pF VGS = 0V, VDS =-15V, ƒ = 1MHz Symbol Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current (Body Diode) — — -4.1 ① A ISM Pulsed Source Current (Body Diode) — — -20 A MOSFET symbol showing the integral reverse p-n junction diode. VSD Diode Forward Voltage — -0.79 -1.0 V IS=1A, VGS=0V trr Reverse Recovery Time — 9.7 — ns Qrr Reverse Recovery Charge — 3.8 — nC TJ = 25°C, IF =-6A, di/dt = 100A/µs Electrical Characteristics (TA=25℃ ℃ ℃ ℃ unless otherwise noted) Source-Drain Ratings and Characteristics |
Nº de peça semelhante - EC733339 |
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Descrição semelhante - EC733339 |
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