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FM-05VR6T10 Folha de dados(PDF) 1 Page - FutureWafer Tech Co.,Ltd |
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FM-05VR6T10 Folha de dados(HTML) 1 Page - FutureWafer Tech Co.,Ltd |
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1 / 1 page Mechanical Data Notes Dice size AX:330um,AY:330um,BX:150um,BY:150um Wafer size 6”(good die:139,000pcs) Chip Thickness 165um(max) Scribe line width 50um Top metal Ti-Ni-Ag Back side metal Ti-Ni-Ag for soldering Parameter Symbol Conditions Value Unit Reverse stand-off voltage VRWM 5 V Peak pulse power PPP tp=8/20us 75 W Peak pulse current IPP tp=8/20us 5 A Electrostatic discharge VESD IEC61000-4-2 ± 25(AIR) KV Max.junction temp. Tj +150 ℃ Parameter Symbol Condition Min. Typ. Max. Unit Breakdown Voltage VBR IT=1mA 6.1 8.5 V Reverse leakage current IR VR=5V 0.03 uA Clamping voltage VC IPP=1A IPP=5A 9.0 15.0 V Diode capacitancd pin1 to 2 Cj VR=0V f=1MHZ 8.0 10.0 13.0 pf Characteristics TA=25°C Chip TVS diode FM-05VR6T10 Notes: (1)sampling testing:no bad dice inking/guaranteed good die >93% (2)Testing follow customer (3)Tj=Ta+Rth(j-a)*(pf+pr),where Rth(j-a)-thermal resistance,Pf-forward power dissipation, Pr-revers power dissipation (4)**For device testing EW1608G1-FW-A Futurewafer Technology Co.,Ltd www.futurewafer.com.tw+886-3-3573583 |
Nº de peça semelhante - FM-05VR6T10 |
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Descrição semelhante - FM-05VR6T10 |
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