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MTB040P04N3 Folha de dados(PDF) 5 Page - Cystech Electonics Corp.

Nome de Peças MTB040P04N3
Descrição Electrónicos  P-Channel Enhancement Mode MOSFET
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Fabricante Electrônico  CYSTEKEC [Cystech Electonics Corp.]
Página de início  http://www.cystekec.com
Logo CYSTEKEC - Cystech Electonics Corp.

MTB040P04N3 Folha de dados(HTML) 5 Page - Cystech Electonics Corp.

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CYStech Electronics Corp.
Spec. No. : C967N3
Issued Date : 2017.11.02
Revised Date :
Page No. : 5/ 9
MTB040P04N3
CYStek Product Specification
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
10
100
1000
10000
0
5
10
15
20
25
30
35
40
-VDS, Drain-Source Voltage(V)
Coss
Ciss
Crss
Threshold Voltage vs Junction Tempearture
0.4
0.6
0.8
1
1.2
1.4
-75 -50 -25
0
25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
ID=-250
μA
ID=-1mA
Forward Transfer Admittance vs Drain Current
0.01
0.1
1
10
0.001
0.01
0.1
1
10
-ID, Drain Current(A)
VDS=-10V
Pulsed
TA=25°C
Gate Charge Characteristics
0
2
4
6
8
10
0
4
8
12
16
20
24
Qg, Total Gate Charge(nC)
ID=-2.5A
VDS=-20V
VDS=-32V
Maximum Safe Operating Area
0.01
0.1
1
10
100
0.01
0.1
1
10
100
-ID, Drain-Source Voltage(V)
DC
10ms
100ms
100
μs
TA=25°C, Tj=150°C, VGS=-10V
RθJA=100°C/W, Single Pulse
1s
1ms
RDS(ON)
Limited
Maximum Drain Current vs Junction Temperature
0
0.5
1
1.5
2
2.5
3
3.5
4
25
50
75
100
125
150
175
Tj, Junction Temperature(°C)
TA=25°C, VGS=-10V,RθJA=100°C/W
single pulse


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