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TMP236 Folha de dados(PDF) 4 Page - Texas Instruments

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Nome de Peças TMP236
Descrição Electrónicos  Low-Power, High-Accuracy Analog Output Temperature Sensors
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Fabricante Electrônico  TI1 [Texas Instruments]
Página de início  http://www.ti.com
Logo TI1 - Texas Instruments

TMP236 Folha de dados(HTML) 4 Page - Texas Instruments

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TMP235, TMP236
SBOS857 – SEPTEMBER 2017
www.ti.com
Product Folder Links: TMP235 TMP236
Submit Documentation Feedback
Copyright © 2017, Texas Instruments Incorporated
6 Specifications
6.1 Absolute Maximum Ratings
MIN
MAX
UNIT
Voltage
Supply, VDD
+6
V
Output, VOUT
–0.3
(VDD + 0.5)
Current
Output
–30
+30
mA
Latch-Up Current, Each Pin
–200
+200
Temperature
Junction temperature (TJ)
+150
°C
Storage temperature (Tstg)
–65
+150
(1)
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.2 ESD Ratings
VALUE
UNIT
V(ESD)
Electrostatic discharge
Human-body model (HBM) per JESD22-A114
±4000
V
Charged-device model (CDM), per JEDEC specification JESD22-C101
(1)
±1000
6.3 Recommended Operating Conditions
MIN
NOM
MAX
UNIT
VDD
Input Voltage (TMP235)
2.3
5.5
V
Input Voltage (TMP236)
3.1
5.5
TA
Operating free-air temperature
–50
150
°C
(1)
For information on self-heating and thermal response time see Layout Guidelines section.
(2)
For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report.
(3)
The junction to ambient thermal resistance (RθJA ) under natural convection is obtained in a simulation on a JEDEC-standard, High-K
board as specified in JESD51-7, in an environment described in JESD51-2. Exposed pad packages assume that thermal vias are
included in the PCB, per JESD 51-5.
(4)
Changes in output due to self heating can be computed by multiplying the internal dissipation by the thermal resistance.
6.4 Thermal Information
THERMAL METRIC(1) (2)
TMP235
UNIT
DCK (SC70)
DBZ (SOT-23)
PINS
PINS
RθJA
Junction-to-ambient thermal resistance(3) (4)
275
167
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
84
90
°C/W
RθJB
Junction-to-board thermal resistance
56
146
°C/W
ΨJT
Junction-to-top characterization parameter
1.2
35
°C/W
ΨJB
Junction-to-board characterization parameter
55
146
°C/W


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