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FDD86369 Folha de dados(PDF) 4 Page - ON Semiconductor

Nome de Peças FDD86369
Descrição Electrónicos  N-Channel PowerTrench MOSFET
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Fabricante Electrônico  ONSEMI [ON Semiconductor]
Página de início  http://www.onsemi.com
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FDD86369 Folha de dados(HTML) 4 Page - ON Semiconductor

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3
Typical Characteristics
Figure 1. Normalized Power Dissipation vs. Case
Temperature
0
25
50
75
100
125
150
175
0.0
0.2
0.4
0.6
0.8
1.0
1.2
TC, CASE TEMPERATURE(oC)
Figure 2. Maximum Continuous Drain Current vs.
Case Temperature
25
50
75
100
125
150
175
200
0
20
40
60
80
100
120
CURRENT LIMITED
BY SILICON
CURRENT LIMITED
BY PACKAGE
VGS = 10V
TC, CASE TEMPERATURE(oC)
Figure 3.
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
0.01
0.1
1
SINGLE PULSE
D = 0.50
0.20
0.10
0.05
0.02
0.01
t, RECTANGULAR PULSE DURATION(s)
DUTY CYCLE - DESCENDING ORDER
2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TC
PDM
t1
t2
Normalized Maximum Transient Thermal Impedance
Figure 4. Peak Current Capability
10
-5
10
-4
10
-3
10
-2
10
-1
110
10
100
1000
VGS = 10V
SINGLE PULSE
t, RECTANGULAR PULSE DURATION(s)
TC = 25oC
I = I2
175 - TC
150
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:


Nº de peça semelhante - FDD86369

Fabricante ElectrônicoNome de PeçasFolha de dadosDescrição Electrónicos
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Inchange Semiconductor ...		 FDD86369 ISC-FDD86369 Datasheet
330Kb / 2P		    isc N-Channel MOSFET Transistor
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ON Semiconductor		 FDD86369-F085 ONSEMI-FDD86369-F085 Datasheet
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Inchange Semiconductor ...		 FDD86369B ISC-FDD86369B Datasheet
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Descrição semelhante - FDD86369

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ON Semiconductor		 FDWS86380_F085 ONSEMI-FDWS86380_F085 Datasheet
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