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SM3G45 Folha de dados(PDF) 2 Page - Toshiba Semiconductor |
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SM3G45 Folha de dados(HTML) 2 Page - Toshiba Semiconductor |
2 / 5 page SM3G45,SM3J45 2001-07-13 2 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP. MAX UNIT Repetitive Peak Off−State Current IDRM VDRM = Rated ― ― 20 µA I T2 (+), Gate (+) ― ― 1.5 II T2 (+), Gate (−) ― ― 1.5 III T2 (−), Gate (−) ― ― 1.5 Gate Trigger Voltage IV VGT T2 (−), Gate (+) ― ― ― V I T2 (+), Gate (+) ― ― 20 II T2 (+), Gate (−) ― ― 20 III T2 (−), Gate (−) ― ― 20 Gate Trigger Current IV IGT VD = 12V RL = 20Ω T2 (−), Gate (+) ― ― ― mA Peak On−State Voltage VTM ITM = 4.5A ― ― 1.5 V Gate Non−Trigger Voltage VGD VD = Rated, Tc = 125°C 0.2 ― ― V Holding Current IH VD = 12V, ITM = 0.2A ― ― 30 mA Critical Rate of Rise of Off−State Voltage dv / dt VD = VDRM, Tj = 125°C Exponential Rise 100 ― ― V / µs Critical Rate of Rise of Off−State Voltage at Commutation (dv / dt) c VDRM = 400V, (di /dt) c = −2A / ms Tj = 125°C 10 ― ― V / µs Thermal Resistance Rth (j−c) Junction to Case, AC ― ― 3.3 °C / W MARKING NUMBER SYMBOL MARK SM3G45 M3G45 * 1 TYPE SM3J45 M3J45 * 2 Example 8A : January 1998 8B : Febrary 1998 8L : December 1998 |
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