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BC640 Folha de dados(PDF) 2 Page - ON Semiconductor |
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BC640 Folha de dados(HTML) 2 Page - ON Semiconductor |
2 / 4 page BC636, BC636–16, BC638, BC640, BC640–16 http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = –10 mAdc, IB = 0) BC636 BC638 BC640 V(BR)CEO –45 –60 –80 — — — — — — Vdc Collector–Base Breakdown Voltage (IC = –100 µAdc, IE = 0) BC636 BC638 BC640 V(BR)CBO –45 –60 –80 — — — — — — Vdc Emitter–Base Breakdown Voltage (IE = –10 mAdc, IC = 0) V(BR)EBO –5.0 — — Vdc Collector Cutoff Current (VCB = –30 Vdc, IE = 0) (VCB = –30 Vdc, IE = 0, TA = 125°C) ICBO — — — — –100 –10 nAdc µAdc ON CHARACTERISTICS (1) DC Current Gain (IC = –5.0 mAdc, VCE = –2.0 Vdc) (IC = –150 mAdc, VCE = –2.0 Vdc) BC636 BC636–16 BC638 BC640 BC640–16 (IC = –500 mA, VCE = –2.0 V) hFE 25 40 100 40 40 100 25 — — — — — — — — 250 250 160 160 250 — — Collector–Emitter Saturation Voltage (IC = –500 mAdc, IB = –50 mAdc) VCE(sat) — — –0.25 –0.5 –0.5 — Vdc Base–Emitter On Voltage (IC = –500 mAdc, VCE = –2.0 Vdc) VBE(on) — — –1.0 Vdc DYNAMIC CHARACTERISTICS Current–Gain — Bandwidth Product (IC = –50 mAdc, VCE = –2.0 Vdc, f = 100 MHz) fT — 150 — MHz Output Capacitance (VCB = –10 Vdc, IE = 0, f = 1.0 MHz) Cob — 9.0 — pF Input Capacitance (VEB = –0.5 Vdc, IC = 0, f = 1.0 MHz) Cib — 110 — pF 1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle 2.0%. |
Nº de peça semelhante - BC640 |
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Descrição semelhante - BC640 |
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