SI4876DY datasheet(2/4 Pages) VISHAY

Nome de Peças	SI4876DY

Descrição Electrónicos	N-Channel 20-V (D-S) MOSFET

Download	4 Pages

Scroll/Zoom	100%

Fabricante Electrônico	VISHAY [Vishay Siliconix]

Página de início	http://www.vishay.com

Logo

2 / 4 page

Si4876DY

Vishay Siliconix

www.vishay.com

2

Document Number: 71312

S-03950—Rev. C, 26-May-03

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 mA

0.6

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "12 V

"100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 16 V, VGS = 0 V

1

mA

Zero Gate Voltage Drain Current

IDSS

VDS = 16 V, VGS = 0 V, TJ = 85_C

20

mA

On-State Drain Currenta

ID(on)

VDS w 5 V, VGS = 4.5 V

50

A

Drain-Source On-State Resistancea

rDS(on)

VGS = 4.5 V, ID = 21 A

0.0037

0.005

W

Drain-Source On-State Resistancea

rDS(on)

VGS = 2.5 V, ID = 17 A

0.0058

0.0075

W

Forward Transconductancea

gfs

VDS = 10 V, ID = 21 A

17

S

Diode Forward Voltagea

VSD

IS = 3 A, VGS = 0 V

0.8

1.2

V

Dynamicb

Total Gate Charge

Qg

55

80

Gate-Source Charge

Qgs

VDS = 10 V, VGS = 4.5 V, ID = 21 A

13

nC

Gate-Drain Charge

Qgd

11

Gate Resistance

Rg

2.0

2.7

4.6

W

Turn-On Delay Time

td(on)

40

60

Rise Time

tr

VDD = 10 V, RL = 10 W

30

45

Turn-Off Delay Time

td(off)

VDD = 10 V, RL = 10 W

ID ^ 1 A, VGEN = 10 V, RG = 6 W

175

260

ns

Fall Time

tf

70

105

Source-Drain Reverse Recovery Time

trr

IF = 3 A, di/dt = 100 A/ms

56

85

Notes

a.

Pulse test; pulse width

v 300 ms, duty cycle v 2%.

b.

Guaranteed by design, not subject to production testing.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0

10

20

30

40

50

0.0

0.5

1.0

1.5

2.0

2.5

0

10

20

30

40

50

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

VGS = 5 thru 2.5 V

25

_C

TC = 125_C

-55

_C

1.5 V

Output Characteristics

Transfer Characteristics

VDS - Drain-to-Source Voltage (V)

VGS - Gate-to-Source Voltage (V)

2.0 V

Nº de peça semelhante - SI4876DY

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Vishay Siliconix	SI4872DY	57Kb / 4P	N-Channel Reduced Qg, Fast Switching MOSFET Rev. A, 17-Jul-00
	SI4874BDY	54Kb / 5P	N-Channel 30-V MOSFET Rev. A, 09-Aug-04
	SI4874BDY	164Kb / 8P	N-Channel 30-V MOSFET Rev. C, 06-Apr-09
	SI4874BDY	162Kb / 8P	N-Channel 30-V MOSFET 01-Jan-2022
VBsemi Electronics Co.,...	SI4874BDY-T1-E3	1,007Kb / 9P	N-Channel 30-V (D-S) MOSFET

More results

Descrição semelhante - SI4876DY

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
DinTek Semiconductor Co...	DTS2300S	327Kb / 7P	N-Channel 20 V (D-S) MOSFET
Vishay Siliconix	SI4158DY	188Kb / 9P	N-Channel 20-V (D-S) MOSFET Rev. A, 17-Nov-08
Analog Power	AM7320N	79Kb / 3P	N-Channel 20-V (D-S) MOSFET
	AM2312N	317Kb / 5P	N-Channel 20-V (D-S) MOSFET
	AM7422NA	348Kb / 5P	N-Channel 20-V (D-S) MOSFET
Vishay Siliconix	SI2374DS	258Kb / 10P	N-Channel 20 V (D-S) MOSFET Rev. A, 14-Apr-14
	SI8406DB	151Kb / 10P	N-Channel 20 V (D-S) MOSFET Rev. A, 30-Apr-12
	SI1056X	123Kb / 8P	N-Channel 20 V (D-S) MOSFET Rev. D, 08-Nov-10
	TN0201K	202Kb / 4P	N-Channel 20-V (D-S) MOSFET Rev. B, 20-Feb-06
	SI4426DY	65Kb / 4P	N-Channel 20-V (D-S) MOSFET Rev. B, 15-May-00
	SI1410EDH	49Kb / 5P	N-Channel 20-V (D-S) MOSFET Rev. D, 31-Oct-05

More results

SI4876DY Folha de dados(PDF) 2 Page - Vishay Siliconix

SI4876DY Folha de dados(HTML) 2 Page - Vishay Siliconix

Nº de peça semelhante - SI4876DY

Descrição semelhante - SI4876DY

Html Pages

1 2 3 4

Folha de dados Download

Ligação URL